Abstract Dense silicon nitride ceramic was sintered by hot pressing at 1800 °C for 3 h under the uniaxial pressure of 40 MPa in N2 atmosphere using CeO2–MgO as sintering aid. In this study, the effect of the addition of CeO2–MgO on the sintering of silicon nitride ceramics was investigated. The equiaxed α-Si3N4 was transformed into a rod-shaped β-Si3N4 completely by using XRD and SEM analysis. The sample reached a maximum density of 98.2% and a high flexural strength (872 ± 65 MPa). The range of dielectric constant is 10.79–11.06 (12.4 GHz), and the dielectric loss is in the order of 10 E−3. The highest thermal conductivity achieved in all samples is 45.5 W/mK.

中文翻译：

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以 CeO2-MgO 为烧结助剂热压 Si3N4 陶瓷的介电常数、介电损耗和热导率

摘要 以CeO2-MgO为烧结助剂，在N2气氛中，单轴压力40 MPa，热压3 h，烧结致密氮化硅陶瓷。在本研究中，研究了添加 CeO2-MgO 对氮化硅陶瓷烧结的影响。通过XRD和SEM分析，等轴α-Si3N4完全转变为棒状β-Si3N4。样品达到了 98.2% 的最大密度和高弯曲强度 (872 ± 65 MPa)。介电常数范围为 10.79–11.06 (12.4 GHz)，介电损耗为 10 E-3 量级。在所有样品中达到的最高热导率为 45.5 W/mK。