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Dielectric Properties of NaCu3Ti3Nb1–xSbxO12 Ceramics
Transactions of the Indian Ceramic Society ( IF 1.2 ) Pub Date : 2018-10-02 , DOI: 10.1080/0371750x.2018.1518729
Mingwen Wang 1 , Yupeng Wang 1 , Wentao Hao 1, 2 , Panpan Xu 3 , Qingshuang Tan 4 , Shuai Yang 1 , Li Sun 1, 2 , Ensi Cao 1, 2 , Yongjia Zhang 1, 2
Affiliation  

ABSTRACT In order to investigate the influence of Sb doping on the dielectric properties of NaCu3Ti3NbO12 ceramics, a series of NaCu3Ti3Nb1–xSbxO12 ceramics were prepared by conventional solid-state reaction technique. Their crystalline structure, microstructure, dielectric properties and complex impedance were systematically investigated. All these ceramics show giant permittivity phenomenon, and their low-frequency dielectric loss decrease significantly but permittivity remains large with increased Sb doping. Impedance spectroscopic analysis reveals that NaCu3Ti3Nb1–xSbxO12 ceramics are composed of insulating grain boundaries and semiconducting grains, and their resistance of grain boundary increases with increased Sb doping. According to internal barrier layer capacitance effect, the decrease of low-frequency dielectric loss in NaCu3Ti3Nb1–xSbxO12 ceramics with increased Sb doping should be caused by the increase of grain boundary resistance. GRAPHICAL ABSTRACT

中文翻译:

NaCu3Ti3Nb1–xSbxO12陶瓷的介电性能

摘要 为了研究 Sb 掺杂对 NaCu3Ti3NbO12 陶瓷介电性能的影响,采用常规固相反应技术制备了一系列 NaCu3Ti3Nb1–xSbxO12 陶瓷。系统地研究了它们的晶体结构、微观结构、介电性能和复阻抗。所有这些陶瓷都表现出巨大的介电常数现象,它们的低频介电损耗显着降低,但随着 Sb 掺杂的增加,介电常数仍然很大。阻抗谱分析表明,NaCu3Ti3Nb1-xSbxO12陶瓷由绝缘晶界和半导体晶粒组成,随着Sb掺杂量的增加,晶界电阻增加。根据内部势垒层电容效应,NaCu3Ti3Nb1-xSbxO12 陶瓷的低频介电损耗随着 Sb 掺杂量的增加而降低,这应该是晶界电阻增加引起的。图形概要
更新日期:2018-10-02
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