ABSTRACT The effects of sintering temperature, heating rate, holding time and sintering additive on the properties of single-phase indium tin oxide (ITO) target, prepared by normal pressure sintering method, were studied systematically. The results showed that target sintered at 1550°C for 10 h with a heating rate of 9°C/min had a higher relative density of 98.7% and a lower resistivity of 4×10–4 Ω.cm. When bismuth trioxide (Bi2O3) was added as a sintering additive, the density of target prepared at 1450°C improved significantly from 87.15% to 93.17%, while the resistivity increased to 73.65×10–4 Ω.cm due to poor electrical conductivity of Bi2O3. Moreover, after adding titanium dioxide (TiO2) as sintering additive, density of the target sintered at 1450°C improved from 87.15% to 91.43%. Importantly, the resistivity reached the minimum value of 3.05×10–4 Ω.cm at 1550°C. GRAPHICAL ABSTRACT

中文翻译：

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Bi2O3、TiO2添加剂及烧结工艺对常压烧结法ITO靶材性能的影响

摘要 系统研究了烧结温度、升温速率、保温时间和烧结添加剂对常压烧结法制备的单相氧化铟锡(ITO)靶材性能的影响。结果表明，在 1550°C 下以 9°C/min 的升温速率烧结 10 h 的靶材具有较高的 98.7% 的相对密度和 4×10–4 Ω.cm 的较低电阻率。当添加三氧化二铋 (Bi2O3) 作为烧结添加剂时，在 1450°C 制备的靶材的密度从 87.15% 显着提高到 93.17%，而电阻率由于导电性差而增加到 73.65×10-4 Ω.cm。 Bi2O3。此外，加入二氧化钛（TiO2）作为烧结添加剂后，1450℃烧结的靶材密度从87.15%提高到91.43%。重要的是，电阻率达到最小值 3。05×10–4 Ω.cm 在 1550°C。图形概要