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Influence of Particle Size on the Electrical Properties and Magnetic Field Dependent I–V Characteristics of Nanocrystalline ZnFe2O4
Transactions of the Indian Ceramic Society ( IF 1.2 ) Pub Date : 2019-04-03 , DOI: 10.1080/0371750x.2019.1624618
Prabir Ghosh 1 , Rabindra Nath Bhowmik 2 , Swagata Bandyopadhyay 1 , Partha Mitra 1
Affiliation  

ABSTRACT The influence of grain size (7-16 nm) on electrical conductivity, dielectric properties and magnetic field dependent I–V characteristics along with magnetoresistance have been studied for zinc ferrite ( ZnFe 2O4). ZnFe2O4 was prepared by co-precipitation technique. Ball milling on the chemical routed material was carried out to control the particle size. The effect of particle size on the conduction mechanism was investigated by nonlinear least-squares fitting of the impedance spectrum. The electrical response was found to be strongly influenced by the particle size of the material. Electrical conductivity decreased with decrease of particle size. Electrical conductivity (σ) significantly changed with temperature indicating thermal activated conductivity mechanism. I–V characteristics of the material showed variation of resistance with magnetic field, indicating existence of magnetoresistance (MR). The exhibition of I–V loops confirmed the existence of two irreversible electronic states (bi-stable states: LRS and HRS) in the material, which helped to extract information about non-volatile electronic states and electrical power loss (loop area) in presence of magnetic field. The I–V loop repetition for 20 times within bias voltage range ±20 V gave the information about the stability of the current variation with bias voltage. GRAPHICAL ABSTRACT

中文翻译:

粒径对纳米晶 ZnFe2O4 的电性能和磁场相关 I-V 特性的影响

摘要 已经研究了铁氧体锌 (ZnFe 2O4) 的晶粒尺寸 (7-16 nm) 对电导率、介电特性和磁场相关 I-V 特性以及磁阻的影响。ZnFe2O4 是通过共沉淀技术制备的。对化学路由材料进行球磨以控制粒度。通过阻抗谱的非线性最小二乘拟合研究了粒径对传导机制的影响。发现电响应受材料粒径的强烈影响。电导率随着粒径的减小而降低。电导率 (σ) 随温度显着变化,表明热激活传导机制。材料的 I-V 特性显示出电阻随磁场的变化,表明存在磁阻 (MR)。I-V 回路的展示证实了材料中存在两种不可逆电子态(双稳态:LRS 和 HRS),这有助于提取有关非易失性电子态和存在时的电功率损耗(回路面积)的信息的磁场。在偏置电压范围 ±20 V 内重复 20 次的 I-V 循环提供了关于电流随偏置电压变化的稳定性的信息。图形概要 这有助于提取关于非易失性电子状态和存在磁场时的电力损耗(回路面积)的信息。在偏置电压范围 ±20 V 内重复 20 次的 I-V 循环提供了关于电流随偏置电压变化的稳定性的信息。图形概要 这有助于提取关于非易失性电子状态和存在磁场时的电力损耗(回路面积)的信息。在偏置电压范围 ±20 V 内重复 20 次的 I-V 循环提供了关于电流随偏置电压变化的稳定性的信息。图形概要
更新日期:2019-04-03
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