ABSTRACT Two series of semi-conducting glazes based on cassiterite phase were prepared and characterized after application on electrical porcelain bodies. In one series, semi-conducting fraction of the final glazes was calcined, then added to the base glaze. In another series, semi-conducting fraction of the studied glazes was precipitated in-situ during firing. Morphology of cassiterite and its optimized content in the studied glazes were found as the most important parameter affecting electrical properties of final glazes. Maximum amount of cassiterite was achieved for the first series containing whole calcined semi-conducting constituent. Band gap of this glaze was found to be 2-2.6 eV. Surface resistance of insulator bodies coated with cassiterite based semi-conducting glazes was obtained 105-107 times more than that of the common glazes, indicating a uniform charge distribution and inhibition of partial discharge through surface of insulator. GRAPHICAL ABSTRACT

中文翻译：

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基于锡石晶相的半导电釉用于瓷绝缘子应用：相变、显微结构和电性能

摘要 制备了两个系列的锡石相半导体釉料，并在电瓷体上进行了表征。在一个系列中，最终釉料的半导体部分被煅烧，然后添加到基础釉料中。在另一个系列中，所研究釉料的半导体部分在烧制过程中原位沉淀。发现锡石的形态及其在所研究釉料中的优化含量是影响最终釉料电性能的最重要参数。含有完整煅烧半导体成分的第一个系列达到了最大量的锡石。发现这种釉的带隙为2-2.6 eV。涂有锡石基半导体釉的绝缘体的表面电阻是普通釉的105-107倍，表明均匀的电荷分布和通过绝缘体表面的局部放电抑制。图形概要