Abstract

Simulation of the irradiation of crystalline silicon with low-energy (50—500 eV) noble-gas ions (He, Ne, Ar, Kr, Xe) is performed using the molecular-dynamics method with damage accumulation. The analysis of structural changes in the near-surface layers of the material demonstrates significant differences between the mechanisms of silicon damage by light and heavy particles. It is shown that, under material irradiation with Xe ions and especially with He ions, the largest clusters are formed by atoms implanted in the material.

中文翻译：

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低能稀有气体离子辐照硅的分子动力学模拟

摘要

使用具有损伤累积的分子动力学方法，对低能（50-500 eV）稀有气体离子（He，Ne，Ar，Kr，Xe）辐照结晶硅进行了模拟。对材料近表面层结构变化的分析表明，轻颗粒和重颗粒对硅的破坏机理之间存在显着差异。结果表明，在Xe离子，尤其是He离子对材料的辐照下，最大的团簇是由注入到材料中的原子形成的。