The effect of Bi₂O₃‐B₂O₃‐SiO₂‐ZnO glass (denoted as BBSZ) content on the densification, microstructure, and electrical properties of ZnO‐based multilayer varistors (MLVs) has been investigated. In ZnO‐based (MLVs), BBSZ acted as a promoter in ZnO grain growth, which increased the grain size of ZnO, resulting in a decrease in breakdown voltage. Results showed that the adding of BBSZ glass had an improvement in densification and overall properties of MLVs. It was found that a maximum value of 5.45 g/cm³ of the bulk density and the optimum properties (V_1mA = 27.28 V, α = 40.33, I_L = 0.75 μA, I_p = 35 A) of ZnO‐based MLVs were achieved with 3 wt% BBSZ glass sintered at 925°C for 3 hours.

中文翻译：

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BBSZ玻璃掺杂ZnO基多层压敏电阻的低温烧结和电性能

研究了Bi ₂ O ₃ -B ₂ O ₃ -SiO ₂ -ZnO玻璃（表示为BBSZ）的含量对ZnO基多层压敏电阻（MLVs）的致密化，微观结构和电性能的影响。在基于ZnO的（MLV）中，BBSZ充当ZnO晶粒生长的促进剂，从而增加了ZnO的晶粒尺寸，从而导致击穿电压降低。结果表明，添加BBSZ玻璃可以改善MLV的致密性和整体性能。据发现，为5.45克/厘米的最大值³的堆积密度和最佳特性（V _1毫安 = 27.28 V，α  = 40.33，我_大号 通过在925°C的温度下烧结3小时的BBSZ玻璃，获得了0.75μA  ，I _p = 35 A的基于ZnO的MLV。