Flexible resistive switching memory devices based on graphene oxide (GO) polymer nanocomposite were prepared on flexible substrate to research the influence of bending on resistive switching behavior. The devices showed evident response in resistive switching memory characteristics to flexible bending. The 2000 cycles flexible bending leads to the switch of resistive switching memory characteristic from write-once-read-many time memory (WORM) to static random access memory (SRAM). Both WORM and SRAM memory properties are all repeatable, and the threshold switching voltage also showed good consistency. The resistive switching mechanism is attributed to the formation of carbon-rich conductive filaments for nonvolatile WORM characteristics. The bending-induced micro-crack may be responsible for the partial broken of the electrical channels, and may lead to the volatile SRAM characteristics.

中文翻译：

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基于氧化石墨烯聚合物纳米复合材料的柔性阻变存储器件

在柔性基板上制备了基于氧化石墨烯（GO）聚合物纳米复合材料的柔性阻变存储器件，以研究弯曲对阻变行为的影响。这些器件在电阻开关存储器特性对柔性弯曲方面表现出明显的响应。2000 个循环的柔性弯曲导致电阻开关存储器特性从一次写入多次读取存储器 (WORM) 切换到静态随机存取存储器 (SRAM)。WORM 和 SRAM 存储器特性均具有可重复性，阈值开关电压也表现出良好的一致性。电阻切换机制归因于富碳导电细丝的形成，具有非挥发性 WORM 特性。弯曲引起的微裂纹可能是导致电通道部分断裂的原因，