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Improved Electrical Properties of NO-nitrided SiC/SiO2 Interface after Electron Irradiation
Chinese Physics B ( IF 1.7 ) Pub Date : 2020-09-01 , DOI: 10.1088/1674-1056/ab9434
Ji-Long Hao 1, 2 , Yun Bai 1, 2 , Xin-Yu Liu 1, 2 , Cheng-Zhan Li 3 , Yi-Dan Tang 1, 2 , Hong Chen 1, 2 , Xiao-Li Tian 1, 2 , Jiang Lu 1, 2 , Sheng-Kai Wang 1, 2
Affiliation  

Effective improvement in electrical properties of NO Passivated SiC/SiO2 interface after electron irradiation has been demonstrated. After 100 kGy electron irradiation, the density of interface traps decreases about one order of magnitude, from 3×1012 to 4×1011 cm-2 eV-1 at 0.2 eV below the conduction band of 4H-SiC without any degradation of electric breakdown field. Particularly, the results of X-ray photoelectron spectroscopy measurement show that the C-N bonds are generated near the interface after electron irradiation, indicating that the carbon related defects are further reduced.

中文翻译:

电子辐照后NO氮化SiC/SiO 2界面电性能的改善

已证明电子辐照后 NO 钝化 SiC/SiO2 界面的电性能得到有效改善。在 100 kGy 电子辐照后,界面陷阱密度降低约一个数量级,从 3×1012 到 4×1011 cm-2 eV-1,在 4H-SiC 导带以下 0.2 eV 处,击穿场没有任何退化. 特别是X射线光电子能谱测量结果表明,电子辐照后在界面附近产生了CN键,表明碳相关缺陷进一步减少。
更新日期:2020-09-01
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