We show the emergence of fractional quantum Hall states in graphene grown by chemical vapor deposition (CVD) for magnetic fields from below 3 T to 35 T where the CVD-graphene was dry-transferred. Effective composite-fermion filling factors up to ν * = 4 are visible and higher order composite-fermion states (with four flux quanta attached) start to emerge at the highest fields. Our results show that the quantum mobility of CVD-grown graphene is comparable to that of exfoliated graphene and, more specifically, that the p /3 fractional quantum Hall states have energy gaps of up to 30 K, well comparable to those observed in other silicon-gated devices based on exfoliated graphene.

中文翻译：

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CVD生长的石墨烯的分数量子霍尔效应

我们显示了通过化学气相沉积（CVD）生长的石墨烯中的分数量子霍尔态的出现，该磁场用于从3 T以下到35 T的磁场，其中CVD-石墨烯是干转移的。可见高达ν* = 4的有效复合费米子填充因子，并且更高阶的复合费米子状态（附加了四个通量量子）开始出现。我们的结果表明，CVD生长的石墨烯的量子迁移率可与剥离的石墨烯媲美，更具体地说，p / 3分数量子霍尔态的能隙高达30 K，与其他硅中观察到的能隙相当片状石墨烯的门控设备。