In this report, we present a vertical memristor based on a layered FePS 3 two-dimensional material with the structure Ag/FePS 3 /Au, where FePS 3 is a single-crystalline layer with a thickness of ∼151 nm. By operating a device with a pulse voltage of 0.1 V dual modes of resistive switching with both analog and digital features are implemented in a single device. One mode lies between the OFF and ON states and another lies in the ON state. The device shows nonvolatility. Short-term plasticity and long-term potentiation are observed. Therefore, the FePS3 memristor is suitable for application in flexible and complex neuromorphic systems.

中文翻译：

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基于具有双重电阻切换模式的FePS 3 2D分层材料的忆阻器

在本报告中，我们介绍了一种基于层状FePS 3二维材料的垂直忆阻器，其结构为Ag / FePS 3 / Au，其中FePS 3是厚度约为151 nm的单晶层。通过以0.1 V的脉冲电压操作设备，可在单个设备中实现具有模拟和数字功能的双模式电阻切换。一种模式处于OFF和ON状态之间，另一种模式处于ON状态。该设备显示出非易失性。观察到短期可塑性和长期增强。因此，FePS3忆阻器适用于柔性和复杂的神经形态系统。