In this letter, a model of strain-induced nanomagnet at room temperature is established to explore the effect of size error on the reliability of straintronic memory and spin neurons. The results show that the relationship between input voltages and 180° magnetization switching probability (activation function) of the nanomagnet has a size dependence. The slope of the activation function is related only to the aspect ratio of the nanomagnet, and the thickness error will not affect its slope. The slope of the activation function will decrease as the aspect ratio increases. At the same time, the offset of the activation function increases with the increasing energy barrier (increase in thickness or decrease in aspect ratio) of the nanomagnet. We found that a slight dimensional error will also significantly reduce the reliability of straintronic memory. Increasing the fabrication accuracy or changing the input voltages can solve this problem. We further studied the relationship between the size error and the reliability of spin neurons by using different size spintronic neural networks for handwritten digits recognition under the same input voltages. We found that the size error has a minor effect on the spin neuron's neurologic computing function. A thickness error of 3 nm or a width error of 8 nm will not affect the recognition accuracy of the spintronic neural network. In other words, straintronic spin neurons are more tolerant to dimensional errors and more reliable than strain memory, and its fabrication accuracy requirements can be lower. These findings can provide important guidance for the design of straintronic spin neuron and memory.

中文翻译：

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纳米磁体几何形状对节能应变电子自旋神经元和记忆可靠性的影响：大小相关研究

在这封信中，建立了室温下应变诱导纳米磁铁的模型，以探讨尺寸误差对应变电子记忆和自旋神经元可靠性的影响。结果表明，输入电压与纳米磁铁的180°磁化切换概率（激活函数）之间的关系具有尺寸依赖性。激活函数的斜率仅与纳米磁铁的纵横比有关，厚度误差不会影响其斜率。激活函数的斜率会随着纵横比的增加而减小。同时，激活函数的偏移随着纳米磁体能垒的增加（厚度增加或纵横比减小）而增加。我们发现轻微的尺寸误差也会显着降低应变电子存储器的可靠性。提高制造精度或改变输入电压可以解决这个问题。我们通过使用不同尺寸的自旋电子神经网络在相同输入电压下进行手写数字识别，进一步研究了尺寸误差与自旋神经元可靠性之间的关系。我们发现尺寸误差对自旋神经元的神经计算功能影响很小。3 nm 的厚度误差或 8 nm 的宽度误差不会影响自旋电子神经网络的识别精度。换句话说，应变电子自旋神经元比应变记忆更能容忍尺寸误差和更可靠，并且其制造精度要求可以更低。