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Widely tunable, heterogeneously integrated quantum dot O-band lasers on silicon
Photonics Research ( IF 7.6 ) Pub Date : 2020-09-10 , DOI: 10.1364/prj.394726
Aditya Malik , Joel Guo , Minh A. Tran , Geza Kurczveil , Di Liang , John E. Bowers

Heterogeneously integrated lasers in the O-band are a key component in realizing low-power optical interconnects for data centers and high-performance computing. Quantum-dot-based materials have been particularly appealing for light generation due to their ultralow lasing thresholds, small linewidth enhancement factor, and low sensitivity to reflections. Here, we present widely tunable quantum-dot lasers heterogeneously integrated on silicon-on-insulator substrate. The tuning mechanism is based on Vernier dual-ring geometry, and a 47 nm tuning range with 52 dB side-mode suppression ratio is observed. These parameters show an increase to 52 nm and 58 dB, respectively, when an additional wavelength filter in the form of a Mach–Zehnder interferometer is added to the cavity. The Lorentzian linewidth of the lasers is measured as low as 5.3 kHz.

中文翻译:

硅上可广泛调谐的异质集成量子点 O 波段激光器

O波段异构集成激光器是实现数据中心和高性能计算低功率光互连的关键部件。基于量子点的材料由于其超低激光阈值、小线宽增强因子和对反射的低敏感性而对光产生特别有吸引力。在这里,我们提出了广泛可调的量子点激光器,异质集成在绝缘体上的硅衬底上。调谐机制基于 Vernier 双环几何结构,并且观察到具有 52 dB 边模抑制比的 47 nm 调谐范围。当以 Mach-Zehnder 干涉仪的形式将附加波长滤波器添加到腔体时,这些参数分别增加到 52 nm 和 58 dB。激光器的洛伦兹线宽测量低至 5.3 kHz。
更新日期:2020-09-10
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