We propose a nanoscale device consisting of a double quantum dot with strong intra- and interdot Coulomb repulsions. In this design, the current can only flow through the lower dot, but is triggered by the gate-controlled occupancy of the upper dot. At low temperatures, our calculations predict the double dot to pass through a narrow Kondo regime, resulting in highly sensitive switching characteristics between three well-defined states—insulating, normal conduction, and resonant conduction.

中文翻译：

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电容耦合量子点中三种导通状态之间的近藤辅助切换

我们提出了一种由双量子点组成的纳米级器件，该量子点具有强大的库伦和库伦斥力。在这种设计中，电流只能流经下点，但由上点的栅极控制占有率触发。在低温下，我们的计算预测双点将通过狭​​窄的近藤状态，从而在三种明确定义的状态（绝缘，正常传导和谐振传导）之间产生高度敏感的开关特性。