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Wake‐Up Mechanisms in Ferroelectric Lanthanum‐Doped Hf0.5Zr0.5O2 Thin Films
Physica Status Solidi (A) - Applications and Materials Science ( IF 2 ) Pub Date : 2020-09-10 , DOI: 10.1002/pssa.202000281
Furqan Mehmood 1, 2 , Thomas Mikolajick 1, 2 , Uwe Schroeder 1
Affiliation  

Since the discovery of ferroelectricity in thin doped hafnium oxide layers, there is a rapidly growing interest in the implementation of this material into nonvolatile memory devices such as ferroelectric capacitors, transistors, or tunnel junctions. In most cases, a field‐cycling‐induced change in the remanent polarization is attributed to wake‐up and fatigue in ferroelectric HfO2 devices. The lanthanum‐doped hafnium/zirconium mixed oxide system is of broad interest due to its high endurance stability and low crystallization temperature which is necessary for low thermal budget, back‐end of line devices. Herein, a detailed temperature‐dependent field‐cycling study is performed in a wide temperature range from liquid nitrogen to room temperature to separate field‐cycling‐induced charge movements from phase change effects. Results are expected to be relevant for similar doped HfO2 ferroelectric layers.

中文翻译:

铁电掺杂镧Hf0.5Zr0.5O2薄膜的唤醒机制

自从在掺杂的氧化thin薄层中发现铁电性以来,人们对该材料在诸如铁电电容器,晶体管或隧道结之类的非易失性存储设备中的实现迅速增长了兴趣。在大多数情况下,场极化引起的剩余极化变化归因于铁电HfO 2的唤醒和疲劳设备。镧掺杂的//锆混合氧化物系统因其高的耐久性稳定性和较低的结晶温度而受到广泛关注,这对于低热预算,生产线后端设备是必需的。在此,在从液氮到室温的较宽温度范围内进行了详细的温度依赖性场循环研究,以将场循环引起的电荷运动与相变效应分开。预期结果将与类似的掺杂HfO 2铁电层有关。
更新日期:2020-09-10
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