Laser‐assisted evolution of few‐layer phosphorene sheets directly on silicon substrates on desired locations is introduced. A 1064 nm laser source and a combination of Ar:O₂ and He:H₂ gases are exploited for an exfoliation/transfer‐free direct crystallization of red phosphorus. High field‐effect mobility of 1450 cm² (V s)⁻¹ and on/off ratio of 10³ are obtained. More details can be found in article number 2000774 by Shams Mohajerzadeh and co‐workers.

中文翻译：

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场效应晶体管：在硅基板上使用新型无剥落直接结晶的高性能基于磷光体的晶体管（Adv。Mater。Interfaces 17/2020）

介绍了激光辅助直接在所需位置的硅衬底上演化出几层磷片的方法。利用1064 nm激光源以及Ar：O ₂和He：H ₂气体的混合物进行红磷的剥落/无转移直接结晶。获得了1450 cm ²（V s）^-1的高场效应迁移率和10 ^3的开/关比。更多详细信息，请参见Shams Mohajerzadeh及其同事的文章编号2000774。