Thin‐film transistors (TFTs) based on transparent amorphous oxide semiconductors (TAOSs) have become essential building blocks for a broad range of electronics, since TAOSs facilitate large‐scale fabrication at moderate temperatures and hence feature compatibility with flexible substrates. An emerging indium‐free alternative to the widely commercially exploited indium gallium zinc oxide (IGZO) is amorphous zinc tin oxide (ZTO); however, according to previous reports, achieving acceptable performance of ZTO‐based devices fabricated at temperatures below 300 °C is still challenging to date. Here, key properties of the first all‐oxide and fully transparent metal‐semiconductor field‐effect transistors (MESFETs), metal‐insulator‐semiconductor field‐effect transistors (MISFETs) and junction field‐effect transistors (JFETs) based on amorphous ZTO are compared, employing PtO_x, HfO_y, and p‐type NiO as gate, respectively. All individual layers have been deposited exclusively at room temperature and do not require any additional postdeposition annealing to obtain sufficient device functionality. Demonstrated TFTs exhibit reasonable current on/off ratios of over six orders of magnitude with subthreshold swings as low as 61 mV dec^–1 at room temperature. Transistor characteristics have been recorded for several weeks to study performance consistency over time and are further investigated regarding their stability under bias stress.

中文翻译：

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基于室温制造的非晶氧化锌锌的全氧化物透明薄膜晶体管：接近亚阈值摆幅的热力学极限

基于透明非晶氧化物半导体（TAOS）的薄膜晶体管（TFT）已成为众多电子产品的重要组成部分，因为TAOS有助于在中等温度下进行大规模制造，因此具有与柔性基板的兼容性。非晶锌锡氧化物（ZTO）是一种广泛使用的铟镓锌氧化物（IGZO）的新兴无铟替代品。但是，根据以前的报告，迄今为止，在低于300°C的温度下制造的基于ZTO的设备要达到可接受的性能仍是一项挑战。在这里，第一个全氧化物和全透明金属半导体场效应晶体管（MESFET）的关键特性，_x，HfO _y和p型NiO分别作为栅极。所有单独的层仅在室温下沉积，不需要任何额外的后沉积退火即可获得足够的器件功能。演示的TFT表现出合理的电流开/关比，超过六个数量级，在室温下亚阈值摆幅低至61 mV dec ^–1。晶体管特性已经记录了数周，以研究随时间变化的性能一致性，并对其在偏置应力下的稳定性进行了进一步研究。