It has been found that substitutional atoms, surface modification, electrostatic gating, and contact electrode engineering can induce doping effects in 2D materials. However, the doping level, area, position, and pattern shape are not well controlled; thus, it is hard to generate high‐performance, multifunctional devices and logic circuits with these doping approaches. Here, it is found that a damage‐free, highly controllable, local doping in multilayer molybdenum ditelluride (MoTe₂) flakes can be realized with highly controllable laser beam scanning irradiation. The doping level, area, position, and pattern shape are well controlled by adjusting parameters of the scanning laser beam. With the controllable doping, the subthreshold swing of MoTe₂‐based transistors can be decreased by one order of magnitude, well‐matched p‐type and n‐type transports can be formed, and threshold voltages can be modulated, then a complementary inverter with ultra‐high gain ≈242 is realized, which is the highest in all reported inverters based on 2D materials. It is also found that a stable negative transconductance behavior can be created for the MoTe₂ transistor by controlling doping position, then a frequency doubler is successfully demonstrated. Therefore, it is proposed that the position‐controlled local doping in multilayer MoTe₂ may offer exciting application potentials in future nanoelectronics.

中文翻译：

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多层MoTe2晶体管中可控局部掺杂对电性能的调制

已经发现，替代原子，表面改性，静电门控和接触电极工程可以在2D材料中引起掺杂效应。但是，掺杂水平，面积，位置和图案形状没有得到很好的控制。因此，采用这些掺杂方法很难生成高性能，多功能的器件和逻辑电路。在此发现，通过高度可控的激光束扫描辐照可以实现多层二碲化钼（MoTe ₂）薄片中的无损，高度可控的局部掺杂。通过调整扫描激光束的参数，可以很好地控制掺杂水平，面积，位置和图案形状。通过可控的掺杂，MoTe ₂的亚阈值摆幅可以将基于晶体管的晶体管减小一个数量级，可以形成匹配良好的p型和n型传输，可以调制阈值电压，然后实现具有≈242的超高增益的互补反相器。在所有报告的基于2D材料的逆变器中最高。还发现通过控制掺杂位置可以为MoTe ₂晶体管产生稳定的负跨导行为，然后成功地证明了倍频器。因此，建议在多层MoTe ₂中进行位置控制的局部掺杂可能在未来的纳米电子学中提供令人兴奋的应用潜力。