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Resistive Switching in Individual Co/ZnO Core/Shell Nanoparticles Formed via Inert Gas Condensation and Selective Oxidation
Advanced Electronic Materials ( IF 6.2 ) Pub Date : 2020-09-11 , DOI: 10.1002/aelm.202000065
Zahra Ahmadi 1 , Haidong Lu 2 , Pinaki Mukherjee 3 , Mark Koten 1 , Alexei Gruverman 2 , Jeffrey E. Shield 1
Affiliation  

Magnetron sputtering inert gas condensation is used to produce core/shell Co/ZnO nanoparticles. Selective oxidation to form the core/shell nanoparticles is accomplished both during nanoparticle formation (“in situ”) and with exposure to ambient conditions (“ex situ”). The ZnO formed in situ shows single‐crystalline nature with specific orientation relationships with the Co core, while the ZnO formed ex situ is polycrystalline. Conductive atomic force microscopy is utilized to measure the electrical behavior of individual nanoparticles, and both types of core/shell nanoparticles display classic bipolar resistive switching behavior. These results highlight potential application of these nanoparticles as promising next generation nonvolatile memories and neuromorphic computational devices.

中文翻译:

通过惰性气体冷凝和选择性氧化形成的单个Co / ZnO核/壳纳米颗粒的电阻转换

磁控溅射惰性气体冷凝被用于生产核/壳Co / ZnO纳米粒子。在形成纳米颗粒期间(“原位”)和暴露于环境条件(“非原位”)都完成了选择性氧化以形成核/壳纳米颗粒。原位形成的ZnO具有单晶性质,与Co核具有特定的取向关系,而异位形成的ZnO是多晶的。导电原子力显微镜用于测量单个纳米粒子的电行为,两种类型的核/壳纳米粒子均表现出经典的双极电阻切换行为。这些结果突出了这些纳米颗粒作为有前途的下一代非易失性存储器和神经形态计算设备的潜在应用。
更新日期:2020-10-11
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