In this paper, Ni-Cu NPs @ a-C:H films with different Cu content, by co-deposition of RF-sputtering and RF-plasma enhanced chemical vapor deposition (RF-PECVD) were prepared using acetylene gas and Ni and Cu targets. We studied optical constants of MWCNTs synthesized, with constant Ni content and different percentages of 5, 40 and 75 % from Cu atoms. With increase of Cu content, the average diameter of MWCNTs were increased however the RMS roughness of films were decreased. It is found that the absorption coefficients of films deposited with 5% Cu have maximum value. Also it can be seen that the minimum values of the optical band gaps of films happen in films deposited with 5% Cu. With increase of Cu content, the values of energy loss by the free charge carriers were increased however the plasma frequency ω_p and free charge carriers concentration N/m* of films were decreased. The free carriers electric susceptibility $\chi$_c at in films deposited with 75% Cu has maximum value. The values of the ratio of free charge carriers concentration to effective mass, N/m*, in films deposited with 5% Cu has maximum value about of 423.7310⁴⁸ m^-3 kg^-1.

本文通过乙炔气体和镍，铜靶材，通过共沉积射频溅射和射频等离子体化学气相沉积（RF-PECVD），制备了不同Cu含量的Ni-Cu NPs @ aC：H薄膜。我们研究了合成的MWCNT的光学常数，该常数具有恒定的Ni含量和来自Cu原子的5、40和75％的不同百分比。随着Cu含量的增加，MWCNT的平均直径增加，而膜的RMS粗糙度降低。发现以5％Cu沉积的膜的吸收系数具有最大值。还可以看出，膜的光学带隙的最小值发生在沉积有5％Cu的膜中。随着Cu含量的增加，能量损耗的由自由载流子的值增加然而等离子体频率ω _p薄膜的自由电荷载流子浓度N / m *降低。自由载流子的电敏感性$\chi$在沉积有75％Cu的薄膜中的_c at具有最大值。沉积有5％Cu的膜中的自由电荷载流子浓度与有效质量的比率N / m *的最大值约为423.7310 ⁴⁸  m ^-3  kg ^-1。