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Ultrahigh energy-storage performance in lead-free BZT thin-films by tuning relaxor behavior
Materials Research Bulletin ( IF 5.4 ) Pub Date : 2021-01-01 , DOI: 10.1016/j.materresbull.2020.111072
Minh D. Nguyen

Abstract Relaxor ferroelectric thin films show excellent energy-storage performance for pulse-power applications. In this study, La-doped Ba1-xLax(Zr0.25Ti0.75)O3 (BLZT, x = 0–8%) thin films were grown on LaNiO3 buffered Ca2Nb3O10-nanosheet/Si substrates. BLZT thin films indicate prominently increasing relaxor behavior with increasing La-doping concentration, which is conducive to obtaining a very slim polarization hysteresis loop with a low remanent polarization and a high breakdown strength. As a result, BLZT thin films with 5 mol.% La-doping simultaneously exhibit a great 72.2 J/cm3 recoverable energy-storage density and a large 78.6% energy-storage efficiency under a high 3.8 MV/cm breakdown strength. These results present a promising environmentally friendly candidate for the next generation of advanced energy-storage capacitor applications.

中文翻译:

通过调节弛豫行为实现无铅 BZT 薄膜的超高储能性能

摘要 弛豫铁电薄膜在脉冲功率应用中表现出优异的储能性能。在这项研究中,La 掺杂的 Ba1-xLax(Zr0.25Ti0.75)O3 (BLZT, x = 0–8%) 薄膜生长在 LaNiO3 缓冲的 Ca2Nb3O10-纳米片/Si 衬底上。BLZT 薄膜表明随着 La 掺杂浓度的增加,弛豫行为显着增加,这有利于获得非常细的极化滞后回线,具有低剩余极化和高击穿强度。因此,掺杂 5 mol.% La 的 BLZT 薄膜在高达 3.8 MV/cm 的击穿强度下同时表现出 72.2 J/cm3 的可恢复储能密度和 78.6% 的高储能效率。这些结果为下一代先进的储能电容器应用提供了一个有前途的环保候选者。
更新日期:2021-01-01
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