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Current transport properties of (Au/Ni)/HfAlO3/n-Si metal–insulator–semiconductor junction
Journal of Physics and Chemistry of Solids ( IF 4 ) Pub Date : 2021-01-01 , DOI: 10.1016/j.jpcs.2020.109758
Engin Arslan , Yosef Badali , Majid Aalizadeh , Şemsettin Altındal , Ekmel Özbay

Abstract In this study, HfAlO3 ternary alloy thin film was grown on n-type silicon using the atomic layer deposition method. The current transport mechanisms in the (Au/Ni)/HfAlO3/n-Si junction were examined over a wide temperature range (80–360 K). The values obtained for the ideality factor (n) varied from 22.93 to 3.94 and the barrier height at zero bias (ФB0) ranged from 0.221 eV to 0.821 eV as the temperature changed from 80 to 360 K. The ΦB0–n and ΦB0–q/2 kT characteristics were investigated to explain the higher n values and non-ideal behavior of the Richardson curves. Two linear regions were found at low temperatures (LTs; 80–180 K) and high temperatures (HTs; 200–360 K), which indicated the presence of a Gaussian distribution barrier height and the average barrier heights ( Φ ¯ B 0 ) were identified. The values obtained for Φ ¯ B o were 0.734 eV for LTs and 1.125 eV for HTs, and the values of σs were 0.085 V for LTs and 0.140 V for HTs. The values obtained for Nss decreased as the temperature increased and they varied between ∼1012 and 1013 eV−1 cm−2. Finally, the dielectric behavior and conductivity of the (Au/Ni)/HfAlO3/n-Si junction were investigated at frequencies between 5 kHz and 2 MHz at room temperature. The values determined for e′ and e′′ at −1 V and 5 kHz were 2.1 and 3.53, respectively.

中文翻译:

(Au/Ni)/HfAlO3/n-Si 金属-绝缘体-半导体结的电流传输特性

摘要 本研究采用原子层沉积法在n型硅上生长HfAlO3三元合金薄膜。(Au/Ni)/HfAlO3/n-Si 结中的电流传输机制在很宽的温度范围 (80–360 K) 内进行了检查。理想因子 (n) 获得的值从 22.93 到 3.94 不等,零偏压下的势垒高度 (ФB0) 在温度从 80 到 360 K 变化时从 0.221 eV 到 0.821 eV。 ΦB0–n 和 ΦB0–q研究了 /2 kT 特性以解释理查森曲线的较高 n 值和非理想行为。在低温 (LTs; 80–180 K) 和高温 (HTs; 200–360 K) 下发现了两个线性区域,这表明存在高斯分布势垒高度,平均势垒高度 ( Φ ¯ B 0 ) 为确定。Φ ¯ B o 获得的值为 0。LT 为 734 eV,HT 为 1.125 eV,σs 的值为 LT 为 0.085 V,HT 为 0.140 V。获得的 Nss 值随着温度的升高而降低,它们在 ~1012 和 1013 eV-1 cm-2 之间变化。最后,在室温下在 5 kHz 和 2 MHz 之间的频率下研究了 (Au/Ni)/HfAlO3/n-Si 结的介电行为和电导率。在 -1 V 和 5 kHz 下为 e' 和 e'' 确定的值分别为 2.1 和 3.53。
更新日期:2021-01-01
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