Possessing inherently low thermal conductivity, BiSbSe₃ is a promising thermoelectric material for medium temperature. Therefore, to substantially optimize the thermoelectric performance of BiSbSe₃, researchers mainly focus on the strategies to improve its electrical transport properties. Among these strongly coupled thermoelectric parameters, carrier concentration and effective mass are two intrinsic variables to decisively affect the electrical transport properties. In this work, Cl as a donor dopant is effective to provide extra electrons in n-type BiSbSe₃, and the carrier concentration and effective mass can be well optimized simultaneously with increasing Cl content owing to the multiple conduction bands in BiSbSe₃. What’s more, maximum weighted mobility ˜53 cm² V^-1 s^-1 is obtained in Cl-doped BiSbSe₃, which contributes to a largely enhanced power factor ˜4.8 μW cm^-1 K^-2 at room temperature and outperforms other halogen-doped BiSbSe₃ samples. Finally, combining the significantly enhanced power factor and maintained low thermal conductivity, a maximum ZT ˜1.0 is achieved in Cl-doped BiSbSe₃ at 800 K.

BiSbSe ₃具有固有的低导热性，是用于中温的有前途的热电材料。因此，为了充分优化BiSbSe ₃的热电性能，研究人员主要集中在改善其电传输性能的策略上。在这些强耦合的热电参数中，载流子浓度和有效质量是决定性地影响电传输性能的两个固有变量。在这项工作中，作为供体掺杂剂的Cl可有效地在n型BiSbSe _3中提供额外的电子，并且由于BiSbSe _3中的多个导带，随着Cl含量的增加，载流子浓度和有效质量可以得到很好的优化。。此外，在掺Cl的BiSbSe _3中获得最大的加权迁移率〜53 cm ² V ^-1 s ^-1，这有助于在室温下大大提高功率因数〜4.8μWcm ^-1  K ^-2，并且胜过其他卤素-掺杂的BiSbSe ₃样品。最后，结合显著增强的功率因数，并保持低的热导率，最大ZT〜1.0是Cl掺杂BiSbSe实现₃在800 K.