Fourier-transform infra-red spectroscopy with frustrated total internal reflection was used to study radiation-induced processes upon the implantation of boron and phosphorus ions into positive FP9120 diazoquinone-novolac photoresist films on silicon. Strengthening of the photoresist adhesion to monocrystalline silicon was found to be caused by the formation of ester linkages between hydroxyl groups on the surface of the silicon wafer oxide layer and carboxyl groups of 1-H-indene-3-carboxylic acid.

中文翻译：

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重氮醌-酚醛清漆光刻胶膜与单晶硅的胶粘相互作用机理

使用具有受挫的全内反射的傅立叶变换红外光谱研究了将硼和磷离子注入到硅上的正FP9120重氮醌-线型光刻胶膜中后的辐射诱导过程。发现光致抗蚀剂对单晶硅的粘附性的增强是由于在硅晶片氧化物层的表面上的羟基与1-H-茚-3-羧酸的羧基之间形成的酯键引起的。