With the rapid development of indium tin oxide (ITO) in the electronic display industry, choosing which raw powders to prepare high-quality ITO targets has always been a controversial topic. In the work, in order to clearly understand the effect of the raw powders on the microstructure and properties of ITO targets and thin films, tin-doped indium oxide (dITO) and In₂O₃-SnO₂ mixed (mITO) powders were chosen to prepare ITO targets for depositing the films and a comparative study on their microstructure and properties was conducted. It is found that, (1) dITO targets possess a higher solid solubility of tin in indium oxide and more uniform elemental distribution, while there are a higher density, a finer grain size and a higher mass ratio of In₂O₃ to SnO₂ for the mITO targets; (2) dITO films with more coarser columnar grains and a rougher surface prefer to grow along the [100] direction in an Ar atmosphere; (3) the conductive property of ITO films only depends on the doping amount of tin and is independent of the raw powders and the preparation process of the target source; (4) dITO films possess the superior optical property and narrower optical band gap; (5) the etching property of mITO films is superior to that of dITO films due to the lower solid solubility of tin in indium oxide.

随着电子显示行业中铟锡氧化物（ITO）的飞速发展，选择哪种原料粉末来制备高质量的ITO靶材一直是一个有争议的话题。在工作中，为了清楚地了解原始粉末对ITO靶材和薄膜的微观结构和性能的影响，选择了掺锡氧化铟（dITO）和In ₂ O ₃ -SnO ₂混合（mITO）粉末制备用于沉积膜的ITO靶，并对其微观结构和性能进行了比较研究。发现：（1）dITO靶具有较高的锡在氧化铟中的固溶度和更均匀的元素分布，而In的密度更高，晶粒更细并且In _2的质量比更高。mITO靶标的O ₃至SnO ₂；（2）柱状晶粒更粗，表面更粗糙的dITO膜更倾向于在Ar气氛中沿[100]方向生长；（3）ITO膜的导电性能仅取决于锡的掺杂量，与原料粉末和靶源的制备工艺无关；（4）dITO薄膜具有优良的光学性能和较窄的光学带隙；（5）由于锡在氧化铟中的固溶度较低，因此mITO膜的蚀刻性能优于dITO膜。