We explore a different aspect of handling the transport (mobility) of charge carriers (electrons) in a doped semiconductor layer under thermal stress. The traps are nonhomogeneously distributed such that denser around the center. Such type of traps distribution biases the electrons to concentrate around the center. Putting on the system to a nonuniform hot temperature around the center makes the electrons to diffuse out of the central region. However, the effect of traps dispersion provides a new distribution of electrons around two points. Then applying a monostable external potential around the center results increasing of the distribution of electrons around these points. In this numerical study, the electrons distribution is regulated by changing the traps distribution, depth of trap potential and strength of the external potential. In comparison with the previous work [Aragie et al. (2014 Aragie, B., M. Asfaw, L. Demeyu, and M. Bekele. 2014. Eur. Phys. J. B 87:214.[Crossref] , [Google Scholar]). Eur. Phys. J. B 87:214], we found a strong distribution of charge carriers around the nearby region.

我们探索在热应力下处理掺杂半导体层中电荷载流子（电子）的传输（迁移率）的不同方面。陷阱不均匀分布，以致中心附近更密集。这种类型的陷阱分布使电子偏向集中在中心附近。将系统置于中心附近不均匀的高温下会使电子扩散出中心区域。但是，陷阱陷阱的作用在两点附近提供了新的电子分布。然后，在中心周围施加单稳态外部电势会导致这些点周围电子的分布增加。在此数值研究中，电子分布通过改变陷阱分布，陷阱深度和外部电位强度来调节。与以前的工作相比[Aragie等。（2014年 Aragie，B.，M.阿斯富，L. Demeyu和M.贝克勒。2014年。欧元。物理 J.B 87：214。[Crossref]  ，[Google Scholar]）。欧元。物理 [J. B 87：214]，我们发现附近区域的电荷载流子分布很强。