The response of a detector fabricated on a silicon substrate in the form of a metamaterial that is a 10 × 10 matrix of split rings containing superconductor-insulator-normal metal-insulator-superconductor tunnel structures to submillimeter wave radiation has been experimentally studied. At voltages below the superconducting gap, the electron temperature T_e at the substrate temperature T ∼ 0.1 K is ∼0.23 K due to overheating by spurious radiation. At the substrate temperature T ∼ 0.3 K, the electron temperature is close to the substrate temperature T_e ≈ T. In both cases, with increasing voltage, T_e decreases due to electron cooling and reaches 0.19 K at a voltage corresponding to the maximum response. The response at T = 0.1 K is greater than that at T ∼ 0.3 K by a factor of 5–6. Thus, cooling of only electrons does not provide the same responsivity as cooling of the detector as a whole.

中文翻译：

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电子冷却的SINIS检测器对亚毫米波辐射的响应

实验研究了以超材料的形式在硅基板上制造的检测器对亚毫米波辐射的响应，该超材料是包含超导体-绝缘体-普通金属-绝缘体-超导体隧道结构的10×10裂环矩阵。在超导隙下面的电压，电子温度Ť _Ë在衬底温度Ť〜0.1 K是~0.23ķ由于寄生辐射过热。在基板温度Ť〜0.3 K，电子温度是接近基板温度Ť _Ë ≈T.在这两种情况下，随着电压的增加，Ť _È由于电子冷却而降低，在对应于最大响应的电压下达到0.19K。在响应Ť = 0.1 K是大于在Ť〜0.3 K内由5-6的因子。因此，仅电子的冷却不会提供与整个探测器的冷却相同的响应度。