Photoconductivity spectra in a HgTe/CdHgTe double quantum well with a normal band structure have been studied. Photosensitivity bands associated with the ionization of a mercury vacancy, which is a doubly charged acceptor, have been detected in photoconductivity spectra. The transformation of photoconductivity spectra when the Fermi level moves from the edge of the valence band through the band gap to the conduction band has been revealed using the residual photoconductivity effect. It has been shown that the observed absorption bands are due to the ionization of doubly charged acceptors rather than individual different singly charged states.

中文翻译：

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通过光学门控探测CdHgTe异质结构中双受体的状态

研究了具有正常能带结构的HgTe / CdHgTe双量子阱中的光电导光谱。在光电导光谱中已检测到与汞空位的电离有关的光敏带，该汞空位是双电荷的受体。利用残余光电导效应揭示了当费米能级从价带的边缘通过带隙移动到导带时光电导光谱的转变。已经表明观察到的吸收带是由于双电荷受体的电离而不是各个不同的单电荷态引起的。