The reversible photostriction (photomechanical strain) in Ge₃₅S₆₅ chalcogenide thin film deposited by a solvent casting method has been monitored using a fiber Bragg grating (FBG) sensor. The shift in Bragg wavelength is used as a probing parameter to quantitatively measure the photoinduced strain arising because of structural modifications in these films under illumination. Exposure to band gap light (405 nm) and above band gap light (302 and 254 nm) leads to a reversible photostriction effect of the order of 100 µε. The present study shows that FBG sensors can be used to effectively measure the optomechanical actuation in chalcogenide films caused by the reversible photostriction effect in the visible and ultraviolet wavelength region.

已经使用光纤布拉格光栅（FBG）传感器监测了通过溶剂浇铸法沉积的Ge ₃₅ S ₆₅硫族化物薄膜中的可逆光致沉淀（光机械应变）。布拉格波长的偏移被用作探测参数，以定量测量由于在照明下这些膜中的结构改变而引起的光致应变。暴露于带隙光（405 nm）以及高于带隙光（302和254 nm）的情况下，可逆光析效果约为100 µε。本研究表明，FBG传感器可用于有效测量硫属化物膜中的可见光和紫外线波长区域中的可逆光致偏光效应引起的光机械致动。