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Pulsed laser annealing of amorphous two-dimensional transition metal dichalcogenides
Journal of Vacuum Science & Technology A ( IF 2.9 ) Pub Date : 2020-08-05 , DOI: 10.1116/6.0000253
Rachel H. Rai 1, 2 , Argelia Pérez-Pacheco 3 , Rosa Quispe-Siccha 3 , Nicholas R. Glavin 2 , Christopher Muratore 1, 2
Affiliation  

Large-area, flexible, two-dimensional transition metal dichalcogenide semiconductor materials (MoS2 and WSe2) were synthesized via magnetron sputtering of amorphous stoichiometric precursor materials on polydimethylsiloxane polymer substrates. Purely amorphous precursor materials and amorphous materials with pre-existing nanocrystalline regions observed via transmission electron microscopy were grown for the studies presented here. The MoS2 and WSe2 material precursors were then illuminated with a pulsed 532 nm laser to induce crystallization to their semiconducting hexagonal phases. The laser optics included an axicon lens to shape the Gaussian pulsed laser into a “Bessel beam” characterized by annular ring geometry. The pattern of the beam, with its rings of high-intensity laser light around a higher-intensity core, produced crystalline rings of the material around an ablation zone on the polymer substrate for MoS2 and WSe2 materials. The crystalline structure and density of atomic defects over the crystalline regions decreased as the same sample area was illuminated with additional pulses. The lateral coherence of the crystal lattice increased with the first 4 pulses but decreased with each subsequent pulse. The impact of preexisting nanocrystalline nanoinclusions in an amorphous film on the crystallization rate for WSe2 precursor materials was examined. The presence of nanocrystalline regions in the amorphous materials increased the crystallization rate under the photonic annealing conditions examined here. This approach of direct synthesis and patterning of materials is a route toward the fabrication of inexpensive flexible electronic devices.

中文翻译:

非晶态二维过渡金属二卤化物的脉冲激光退火

通过磁控溅射非晶态化学计量的前驱体材料在聚二甲基硅氧烷聚合物衬底上合成了大面积,柔性的二维过渡金属硫化氢半导体材料(MoS 2和WSe 2)。生长纯净的非晶态前驱物材料和通过透射电子显微镜观察到的具有预先存在的纳米晶区域的非晶态材料用于此处提出的研究。MoS 2和WSe 2然后用脉冲532 nm激光照射材料前驱物,以诱导结晶成它们的半导体六方相。激光光学系统包括一个轴锥透镜,可将高斯脉冲激光整形为具有圆环几何形状的“贝塞尔光束”。光束的图案,其高强度激光环围绕着较高强度的磁芯,在MoS 2和WSe 2的聚合物基板上的烧蚀区周围产生了材料的晶体环材料。当用额外的脉冲照射相同的样品区域时,晶体结构和整个晶体区域的原子缺陷密度降低。晶格的横向相干性随着前四个脉冲而增加,但随随后的每个脉冲而降低。检验了非晶膜中预先存在的纳米晶体纳米夹杂物对WSe 2前驱体材料的结晶速率的影响。在此处研究的光子退火条件下,非晶态材料中纳米晶区域的存在增加了结晶速率。这种直接合成和图案化材料的方法是通向制造廉价柔性电子设备的途径。
更新日期:2020-09-10
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