An oxide layer with a known thickness and chemistry was grown on delta stabilized Pu and sputtered with 1–5 keV Ar⁺ ions over a range of incident ion angle between 22° and 72°. From the time required to remove the oxide layer, sputter yields of PuO₂ were calculated. The sputter yields appear to increase with higher Ar⁺ ion beam energy in the range of 1–5 keV at an incident sputter ion angle of 42° and were found to increase with a decreasing angle of incidence up to 62°. The degree of oxide reduction induced during the sputter process was found to vary with the incident sputter ion angle.

中文翻译：

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1–5 keV Ar +离子的二氧化lu溅射产率变化

在δ稳定的Pu上生长具有已知厚度和化学性质的氧化物层，并在22°至72°的入射离子角范围内用1-5keV Ar ⁺离子进行溅射。从去除氧化物层所需的时间，计算出PuO _2的溅射产率。当入射离子角为42°时，在1-5 keV范围内，随着Ar ⁺离子束能量的增加，溅射产率似乎会增加，并且当入射角减小到62°时，溅射产率会增加。发现在溅射过程中引起的氧化物还原程度随入射的溅射离子角而变化。