Abstract The reverse recovery (RR) behavior of SiC MOSFET body diode is of great importance in power application, where these devices are used in a wide range of operating temperatures. The carrier lifetime in the drift region varies with temperature, and it heavily affects the tailoring of the RR current, opening reliability issues related to the RR voltage amplitude and to possible anomalous voltage oscillations during the recovery. From the users' point of view, it would be useful to have a simple technique able to give predictive information about the body diode RR behavior of commercial devices over the whole range of working temperatures. An experimental-simulation approach is presented in this paper to correlate the carrier lifetime measured by simple OCVD measurements versus temperature with the RR behavior of the body diode, that can be useful at the design stage of power converters. Simulations of the body diode reverse-recovery are performed for a wide range of carrier lifetimes. This allows to estimate the effect of changes of carrier lifetime with temperature on the body diode switching transients. Preliminary results obtained with a 1700 V/5A commercial MOSFET are shown.

中文翻译：

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OCVD 载流子寿命与温度测量值与 SiC 功率 MOSFET 体二极管的反向恢复行为之间的相关性

摘要 碳化硅 MOSFET 体二极管的反向恢复 (RR) 行为在电源应用中非常重要，这些器件在广泛的工作温度范围内使用。漂移区中的载流子寿命随温度变化，它严重影响 RR 电流的定制，打开与 RR 电压幅度相关的可靠性问题，以及恢复期间可能的异常电压振荡。从用户的角度来看，拥有一种能够提供有关商业设备在整个工作温度范围内的体二极管 RR 行为的预测信息的简单技术将是有用的。本文提出了一种实验模拟方法，将通过简单 OCVD 测量测量的载流子寿命与温度与体二极管的 RR 行为相关联，这在电源转换器的设计阶段很有用。体二极管反向恢复的模拟在很宽的载流子寿命范围内进行。这允许估计载流子寿命随温度变化对体二极管开关瞬变的影响。显示了使用 1700 V/5A 商用 MOSFET 获得的初步结果。