Two types of iridium oxide films formed at the Ti₂AlC substrate were investigated: (1) anodically electrodeposited iridium oxide film from the solution based on IrCl₃xH₂O; (2) iridium oxide film prepared by cycling thin layer of electrodeposited Ir in the 0.5 M H₂SO₄ from − 0.25 to 1.20 V. It was shown that during anodic electrodeposition of iridium oxide film (1) coulombic efficiency decreases with increasing anodic potential, being only 3% at E = 0.7 V vs. SCE and 26% at E = 0.62 V vs. SCE. A pair of peaks corresponding to the transition Ir(III)-oxide/Ir(IV)-oxide was present on the CVs recorded in 0.5 M H₂SO₄. While cycling pure Ir thin layer in the solution of 0.5 M H₂SO₄ from − 0.25 to 1.20 V (2) up to 100 cycles, typical CV response was characterized with the prepeak and a pair of peaks corresponding to the Ir(III)/Ir(IV)-oxide transition. With the increase of cycles number to 150, additional peak at potential of 1.0 V appeared. This peak was formed on the account of pair of peaks corresponding to the Ir(III)/Ir(IV)-oxide transition. The oxygen evolution reaction (OER) was investigated at both iridium oxide films. It was shown that the Tafel slope for the OER was ~ 40 mV dec⁻¹ for the first polarization curve, confirming that the rds was a reaction S–OH → S–O_ads + H⁺ + e⁻. As the number of recorded polarization curves increased, the activity of both types of iridium oxide films decreased, due to dissolution of iridium oxide films at the potentials of the OER. It is shown that anodically electrodeposited iridium oxide film is more active for the OER than that obtained by cycling electrodeposited iridium layer. However, both iridium oxide films exhibited insufficient stability.

研究了在Ti ₂ AlC衬底上形成的两种类型的氧化铱膜：（1）从基于IrCl ₃ xH ₂ O的溶液中阳极电沉积氧化铱膜；（2）通过使电沉积Ir薄膜在0.5 MH ₂ SO _4中从-0.25到1.20 V循环而制备的氧化铱膜。结果表明，在阳极电沉积氧化铱膜期间（1），库仑效率随着阳极电位的增加而降低， 与SCE相比，在E = 0.7 V时仅为3％；对于SCE，在E  = 0.62 V时仅为26％。在0.5 MH ₂ SO _4中记录的CV上存在一对对应于跃迁Ir（III）-氧化物/ Ir（IV）-氧化物的峰。当纯Ir薄层在0.5 MH ₂ SO ₄的溶液中从− 0.25到1.20 V（2）循环多达100个周期时，典型的CV响应的特征在于前峰和一对峰对应于Ir（III）/ Ir（IV）-氧化物的转变。随着周期数增加到150，在1.0 V的电位出现了另一个峰值。该峰是由于对应于Ir（III）/ Ir（IV）-氧化物跃迁的一对峰而形成的。在两个氧化铱膜上都研究了析氧反应（OER）。结果表明，第一条极化曲线的OER的Tafel斜率为〜40 mV dec ^-1，证实rds是S–OH→S–O _ads  + H ⁺ + e-的反应^。。随着记录的极化曲线数目的增加，由于氧化铱膜在OER的电势下溶解，两种类型的氧化铱膜的活性均降低。结果表明，与通过循环电沉积铱层获得的膜相比，阳极电沉积氧化铱膜对OER的活性更高。然而，两个氧化铱膜都表现出不足的稳定性。