Abstract

Results are presented of a study of the morphology of germanium films nanostructured by ion implantation. Film samples were grown by magnetron sputtering in an ultrahigh-vacuum installation and then irradiated with 40 keV Ge⁺ ions at fluences in the range of (1.8–8) × 10¹⁶ ions/cm². Scanning electron microscopy demonstrated that vacancy complexes with diameters of ~50–150 nm are gradually formed in the bulk of implanted germanium with increasing implantation fluence. After a certain implantation fluence is reached, the complexes emerge on the surface, thereby forming a developed surface profile of the irradiated films.

中文翻译：

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锗+离子注入锗薄膜中孔的形成。

摘要

提出了通过离子注入纳米结构锗膜的形态研究的结果。膜样品通过磁控溅射在超高真空设备中生长，然后以40 keV Ge ⁺离子辐照，通量范围为（1.8-8）×10 ¹⁶离子/ cm ²。扫描电子显微镜显示，随着注入注量的增加，在大量注入的锗中逐渐形成直径约50-150 nm的空位络合物。在达到一定的注入通量后，复合物出现在表面上，从而形成被辐照膜的显影表面轮廓。