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Spin polarization in monolayer MoS2 in the presence of proximity-induced interactions
International Journal of Modern Physics C ( IF 1.9 ) Pub Date : 2020-06-09 , DOI: 10.1142/s0129183120501430
X. N. Zhao 1, 2 , W. Xu 1, 3 , Y. M. Xiao 3 , B. Van Duppen 4
Affiliation  

When monolayer (ML) MoS2 is placed on a substrate, the proximity-induced interactions such as the Rashba spin-orbit coupling (RSOC) and exchange interaction (EI) can be introduced. Thus, the electronic system can behave like a spintronic device. In this study, we present a theoretical study on how the presence of the RSCO and EI can lead to the band splitting, the lifting of the valley degeneracy and to the spin polarization in [Formula: see text]- and [Formula: see text]-type ML MoS2. We find that the maxima of the in-plane spin orientation in the conduction and valence bands in ML MoS2 depend on the Rashba parameter and the effective Zeeman field factor. At a fixed Rashba parameter, the minima of the split conduction band and the maxima of the split valence band along with the spin polarization in ML MoS2 can be tuned effectively by varying the effective Zeeman field factor. On the basis that the EI can be induced by placing the ML MoS2 on a ferromagnetic substrate or by magnetic doping in ML MoS2, we predict that the interesting spintronic effects can be observed in [Formula: see text]- and [Formula: see text]-type ML MoS2. This work can be helpful to gain an in-depth understanding of the basic physical properties of ML MoS2 for application in advanced electronic and optoelectronic devices.

中文翻译:

存在邻近诱导相互作用时单层 MoS2 中的自旋极化

当单层 (ML) MoS2放置在基板上,可以引入邻近诱导的相互作用,例如 Rashba 自旋轨道耦合 (RSOC) 和交换相互作用 (EI)。因此,电子系统可以像自旋电子设备一样工作。在这项研究中,我们提出了关于 RSCO 和 EI 的存在如何导致带分裂、谷简并性的提升和 [公式:见文本]-和 [公式:见文本] 中的自旋极化的理论研究]型ML MoS2. 我们发现 ML MoS 中导带和价带中面内自旋方向的最大值2取决于 Rashba 参数和有效塞曼场因子。在固定的 Rashba 参数下,分裂导带的最小值和分裂价带的最大值以及 ML MoS 中的自旋极化2可以通过改变有效塞曼场因子来有效地调整。基于可以通过放置 ML MoS 来诱导 EI2在铁磁衬底上或通过在 ML MoS2 中进行磁性掺杂2,我们预测有趣的自旋电子效应可以在[公式:见文本]-和[公式:见文本]-型 ML MoS2. 这项工作有助于深入了解 ML MoS2 的基本物理性质2应用于先进的电子和光电设备。
更新日期:2020-06-09
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