We report a systematic study on the growth conditions of Sn${}_{1-x}$In${}_x$Te thin films by molecular beam epitaxy for maximization of superconducting transition temperature $T_c$. Careful tuning of the flux ratios of Sn, In, and Te enables us to find an optimum condition for substituting rich In content ($x=0.66$) into Sn site in a single phase of Sn${}_{1-x}$In${}_x$Te beyond the bulk solubility limit at ambient pressure ($x=0.5$). $T_c$ shows a dome-shaped dependence on In content $x$ with the highest $T_c=4.20$ K at $x=0.55$, being consistent to that reported for bulk crystals. The well-regulated Sn${}_{1-x}$In${}_x$Te films can be a useful platform to study possible topological superconductivity by integrating them into the state-of-the-art junctions and/or proximity-coupled devices.

中文翻译：

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超导Sn1-xInxTe薄膜的分子束外延

我们报告了有关锡生长条件的系统研究${}_{\mathrm{1个}-X}$在${}_X$Te薄膜通过分子束外延最大化超导转变温度 ${Ť}_C$。仔细调整Sn，In和Te的通量比可以使我们找到最佳的条件来代替富In含量（$X=0.66$）进入锡单相的锡站点${}_{\mathrm{1个}-X}$在${}_X$Te超过环境压力下的整体溶解度极限（$X=0.5$）。 ${Ť}_C$ 显示出圆顶状对In含量的依赖性 $X$ 最高的 ${Ť}_C=4.20$ K在 $X=0.55$，与报道的大块晶体一致。监管良好的锡${}_{\mathrm{1个}-X}$在${}_X$通过将薄膜集成到最新的结和/或邻近耦合设备中，薄膜可以成为研究可能的拓扑超导性的有用平台。