SnTe is proposed to be an intriguing low-toxicity alternative to PbTe. Herein, we report the diminished lattice thermal conductivity (κ_L) and enhanced zT of SnTe by way of vacancy engineering. (SnTe)_1-x(Sb₂Te₃)_x (x = 0.03, 0.06, and 0.10) and (SnTe)_1-y(Sb₂Se₃)_y (y = 0.03 and 0.06) were synthesized by blending and sintering their solution-synthesized nano/microstructures (i.e., SnTe octahedral particles, Sb₂Te₃ nanoplates, and Sb₂Se₃ nanorods). Benefiting from the chemical reactions during sintering, single-phase SnTe-based solid solutions were formed when x or y is not higher than 0.06, into which tunable concentrations of Sn vacancies were introduced. Such vacancies significantly enhance phonon scattering, leading to the sharply reduced room temperature κ_L of 1.40 and 1.26 W m^–1 K^–1 for x = 0.06 and y = 0.06 samples, respectively, as compared to 3.73 W m^–1 K^–1 for pristine SnTe. Enabled by point defects with the highest concentration and SnSb₂Te₄ secondary phase, (SnTe)_0.90(Sb₂Te₃)_0.10 sample obtains the lowest κ_L of 0.70 W m^–1 K^–1 at 813 K. Ultimately, maximum zT values of 0.6 and 0.7 at 813 K are achieved in (SnTe)_0.90(Sb₂Te₃)_0.10 and (SnTe)_0.94(Sb₂Se₃)_0.06, respectively. This study demonstrates the effectiveness of vacancy engineering in improving zT of SnTe-based materials.

中文翻译：

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通过溶剂热反应和烧结合成在（SnTe）1-x（Sb2Te3）x和（SnTe）1-y（Sb2Se3）y中获得增强的热电性能。

SnTe被认为是PbTe的一种有趣的低毒性替代品。在这里，我们报告的减少晶格热导率（κ_大号）和增强的zT的SnTe由空置工程的方式。（SnTe）_{1- x}（Sb ₂ Te ₃）_x（x = 0.03、0.06和0.10）和（SnTe）_{1- y}（Sb ₂ Se ₃）_y（y = 0.03和0.06）通过混合和烧结合成其溶液合成的纳米/微观结构（即SnTe八面体颗粒，Sb ₂ Te ₃纳米板和Sb ₂Se ₃纳米棒）。得益于烧结过程中的化学反应，当x或y不大于0.06时会形成单相SnTe基固溶体，并在其中引入可调节浓度的Sn空位。这些空缺显著增强声子散射，从而导致急剧降低室温κ_大号的1.40和1.26脉冲W M ^-1 ķ ^-1为X = 0.06和ÿ = 0.06的样品，分别相比于3.73脉冲W M ^-1 ķ ^-1用于原始SnTe。通过具有最高浓度和SnSb ₂ Te _4的点缺陷实现第二相，（的SnTe）_0.90（SB ₂碲₃）_0.10样品获得最低κ_大号的0.70脉冲W M ^-1 ķ ^-1最终在813 K.，最大的zT在813的K 0.6和0.7的值在（的SnTe得以实现）_0.90（Sb ₂ Te ₃）_0.10和（SnTe）_0.94（Sb ₂ Se ₃）_0.06。这项研究证明了空位工程在改善SnTe基材料的zT方面的有效性。