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Pulsed laser deposited CuNb2O6 polymorph photocathode-An alternate to NiO p-DSSCs
Materials Science in Semiconductor Processing ( IF 4.1 ) Pub Date : 2020-09-09 , DOI: 10.1016/j.mssp.2020.105404
T.C. Sabari Girisun , N. Priyadarshani , Subhendu K. Panda , B. Subramanian

Efficient photocathodes made of polymorph monoclinic and orthorhombic CuNb2O6 thin films was prepared by PLD technique (248 nm, 5 Hz, 525 mJ/cm2, (30 °C, 100 °C, 200 °C, 400 °C, 600 °C). Desired phase formation was confirmed from XRD peak corresponding to (131) and (131) (d = 2.975 Å and d = 2.919 Å) of m-CuNb2O6 and (311) (d = 2.939 Å) of o-CuNb2O6 plane. Morphological analysis exposes transformation of cubic into truncated cubes in m-CuNb2O6 and polyhedron to spherical particles in m-CuNb2O6 thin films. Using CuNb2O6, p-DSSC was fabricated (CNO/N719/I/I3/Pt) and their efficiency was tested. Photovoltaic cell exhibited device performance of m-CuNb2O6 (0.24%) and o-CuNb2O6 (0.22%). Higher photovoltaic performance of o-CuNb2O6 (600 °C) photocathode DSSC arises due to various factors like dense, continuous surface with well-connected morphology, higher dye loading, NIR light harnessing capability and higher photoconversion efficiency. PLD deposited CuNb2O6 provides a new insight in the DSSCs application.



中文翻译:

脉冲激光沉积CuNb 2 O 6多晶型光电阴极-NiO p- DSSC的替代物

通过PLD技术(248 nm,5 Hz,525 mJ / cm 2,(30°C,100°C,200°C,400°C,600,600),由多晶型单斜晶和正交晶体CuNb 2 O 6薄膜制成的高效光电阴极从XRD峰确认了所需的相形成,该峰对应于(1个31)和(131)(d = 2.975Å和d = 2.919Å)的m-CuNb 2 O 6平面和(311)(d = 2.939Å)的o-CuNb 2 O 6平面。形态分析揭示了m-CuNb 2 O 6中立方晶向截短的立方和多面体的转变为m-CuNb 2 O 6薄膜中的球形。使用CuNb 2 O 6制备了p-DSSC(CNO / N719 /一世-/一世3-/ Pt)及其效率进行了测试。光伏电池表现出m-CuNb 2 O 6(0.24%)和o-CuNb 2 O 6(0.22%)的器件性能。o-CuNb 2 O 6(600°C)光电阴极DSSC具有更高的光伏性能,这是由于多种因素引起的,例如致密,连续的表面和形态良好的连接,更高的染料载量,近红外光利用能力和更高的光转换效率。PLD沉积的CuNb 2 O 6提供了DSSCs应用的新见解。

更新日期:2020-09-10
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