Abstract The n-TiO2/polyphenylene (PPh)/p-Si heterojunction devices were fabricated in which PPh film and TiO2 top layer were grown on p-Si substrates by diazonium modification method and cathodic electrodeposition, respectively. The XPS, UV–vis diffuse reflectance and STM analyses of the films were performed. After the characterization of deposited films and the fabrications of n-TiO2/PPh/p-Si sandwich devices, the electrical measurements of nine devices were carried out from the current–voltage (I–V) characteristics, at room temperature. The I–V characteristics of n-TiO2/PPh/p-Si heterojunctions were compared with TiO2/p-Si heterojunctions, one of them was analysed in more detailed and it was observed that the n-TiO2/PPh/p-Si gave better performance than TiO2/p-Si heterojunctions such that lower ideality factor, higher rectification ratio and more stable reverse current characteristics. Then, the main device parameters of n-TiO2/PPh/p-Si were compared with many devices reported in literature based on TiO2/p-Si device and TiO2 preparation techniques. Furthermore, the rectification ratio of n-TiO2/PPh/p-Si heterojunction was 9.42 × 105, while it was 5.80 × 102 for TiO2/p-Si heterojunction. Later, the capacitance-voltage (C–V) and conductance-voltage (G-V) measurements of the n-TiO2/PPh/p-Si heterojunction was performed depending on applied frequency and bias and it was observed that the values of capacitance and conductance were found a strongly function of bias voltage.

中文翻译：

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通过形成n-TiO2/聚苯撑/p-Si异型夹层异质结改善n-TiO2/p-Si异质结的性能

摘要 制备了n-TiO2/聚亚苯基(PPh)/p-Si异质结器件，其中PPh薄膜和TiO2顶层分别通过重氮改性法和阴极电沉积法生长在p-Si衬底上。对薄膜进行了 XPS、UV-vis 漫反射和 STM 分析。在表征沉积薄膜和制造 n-TiO2/PPh/p-Si 夹层器件之后，在室温下从电流 - 电压 (I-V) 特性对九个器件进行了电气测量。将 n-TiO2/PPh/p-Si 异质结与 TiO2/p-Si 异质结的 I-V 特性进行了比较，对其中之一进行了更详细的分析，观察到 n-TiO2/PPh/p-Si 给出了性能优于 TiO2/p-Si 异质结，从而降低理想因子，更高的整流比和更稳定的反向电流特性。然后，基于TiO2/p-Si器件和TiO2制备技术，将n-TiO2/PPh/p-Si的主要器件参数与文献报道的许多器件进行了比较。此外，n-TiO2/PPh/p-Si异质结的整流比为9.42×105，而TiO2/p-Si异质结的整流比为5.80×102。后来，根据施加的频率和偏压对 n-TiO2/PPh/p-Si 异质结进行电容-电压 (C-V) 和电导-电压 (GV) 测量，观察到电容和电导的值发现偏压的强函数。基于TiO2/p-Si器件和TiO2制备技术，将n-TiO2/PPh/p-Si的主要器件参数与文献报道的许多器件进行了比较。此外，n-TiO2/PPh/p-Si异质结的整流比为9.42×105，而TiO2/p-Si异质结的整流比为5.80×102。后来，根据施加的频率和偏压对 n-TiO2/PPh/p-Si 异质结进行电容-电压 (C-V) 和电导-电压 (GV) 测量，观察到电容和电导的值发现偏压的强函数。基于TiO2/p-Si器件和TiO2制备技术，将n-TiO2/PPh/p-Si的主要器件参数与文献报道的许多器件进行了比较。此外，n-TiO2/PPh/p-Si异质结的整流比为9.42×105，而TiO2/p-Si异质结的整流比为5.80×102。后来，根据施加的频率和偏压对 n-TiO2/PPh/p-Si 异质结进行电容-电压 (C-V) 和电导-电压 (GV) 测量，观察到电容和电导的值发现偏压的强函数。