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Photoluminescence of Heterostructures with Ultrathin CdTe/ZnTe Quantum Wells
Physics of the Solid State ( IF 0.6 ) Pub Date : 2020-09-09 , DOI: 10.1134/s1063783420090073
N. G. Filosofov , A. Yu. Serov , G. Karczewski , V. F. Agekyan , H. Mariette , V. P. Kochereshko

Abstract

Heterostructures of the CdTe/ZnTe type with ultrathin quantum wells are studied. Lines of light and heavy excitons bound to the CdTe layers are observed in the spectra. It is found that the photoluminescence intensity of the light exciton is comparable to the luminescence intensity of the heavy exciton. The temperature shifts of these lines are different, and the lines are intersected at a temperature of 65 K. The estimates of the energy and wave functions of the exciton states have made it possible to clarify parameters of some bands and excitons in such structures.


中文翻译:

超薄CdTe / ZnTe量子阱对异质结构的光致发光

摘要

研究了具有超薄量子阱的CdTe / ZnTe型异质结构。在光谱中观察到与CdTe层结合的轻和重激子线。发现轻激子的光致发光强度与重激子的光致发光强度相当。这些线的温度变化是不同的,并且线在65 K的温度下相交。激子态的能量和波函数的估计使得可以弄清此类结构中某些能带和激子的参数。
更新日期:2020-09-09
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