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Analytical modeling of surface potential, capacitance and drain current of heterojunction TFET
Applied Physics A ( IF 2.7 ) Pub Date : 2020-09-09 , DOI: 10.1007/s00339-020-03945-0
Sarabjeet Kaur , Ashish Raman , Rakesh Kumar Sarin

This paper presents an analytical model for double-gate (DG) Heterojunction Tunnel Field Effect Transistor (H-TFET). The Poisson’s equation is solved to obtain the electrostatic potential solution which is used to drive the capacitance and drain current model. To include the impact of n-type impurity atoms in the channel region, Poisson’s equation considers the accumulation charges and ionized charges. Similarly, these charges are considered for capacitance modeling. Different III–V materials along with group-IV materials are being used to enhance the performance of H-TFET. The proposed model includes the impact of off-set between the bands due to the formation of heterojunction at the tunneling interface. The model also incorporates the influence of both the gate and the drain voltages, simultaneously. To ensure the performance of the developed model, the modeled results are validated with TCAD simulation results and a good match is obtained between them. In addition, the developed model does not include any implicit function making it SPICE-friendly for circuit designing.

中文翻译:

异质结 TFET 的表面电位、电容和漏极电流的分析建模

本文介绍了双栅极 (DG) 异质结隧道场效应晶体管 (H-TFET) 的分析模型。求解泊松方程以获得用于驱动电容和漏极电流模型的静电势解。为了包括沟道区中 n 型杂质原子的影响,泊松方程考虑了累积电荷和电离电荷。类似地,这些电荷被考虑用于电容建模。不同的 III-V 族材料以及 IV 族材料被用于增强 H-TFET 的性能。所提出的模型包括由于在隧道界面处形成异质结而导致的带间偏移的影响。该模型还同时考虑了栅极和漏极电压的影响。为确保所开发模型的性能,建模结果与 TCAD 仿真结果进行了验证,并在它们之间获得了良好的匹配。此外,开发的模型不包含任何隐式函数,使其对电路设计具有 SPICE 友好性。
更新日期:2020-09-09
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