This work reports the effect of x-ray radiation on In 2 O 5 Sn based Transparent Gate Recessed Channel (TGRC) MOSFET with the high-k dielectric at the sub-20 nm regime. Reliability of TGRC-MOSFET with a high-k dielectric in harsh radiation environment (x-ray radiation in the 1k to 10k rad dose range after irradiation) is the main aim of this analysis using TCAD simulation. Results reveal that HfO 2 as a gate stack on SiO 2 improves the device reliability and enhances the drain current, hole trap density, threshold voltage shift, and radiation sensitivity as compared to Al 2 O 3 and ZrO 2 gate stack with 1k rad to 10 k rad radiation doses. Trap/de-trap model has been used for interface charging as well as insulator along with the electron-hole pair generation and recombination. Further, the thermal effect on threshold voltage and sensitivity has also been evaluated. Results suggest that the proposed device with a ...

中文翻译：

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评估高k栅堆叠式In 2 O 5 Sn栅凹槽沟道MOSFET的X射线辐射可靠性

这项工作报告了X射线辐射对基于In 2 O 5 Sn的透明栅极嵌入式沟道（TGRC）MOSFET的影响，该沟道具有在20 nm以下的高k电介质。使用TCAD模拟进行分析的主要目的是在恶劣的辐射环境（辐照后1k至10k rad剂量范围内的x射线辐射）下具有高k电介质的TGRC-MOSFET的可靠性。结果表明，与1k rad到10 rad的Al 2 O 3和ZrO 2栅叠层相比，HfO 2作为SiO 2上的栅叠层可提高器件可靠性并增强漏极电流，空穴陷阱密度，阈值电压偏移和辐射敏感性。 k rad辐射剂量。陷阱/去陷阱模型已用于界面充电以及绝缘体以及电子-空穴对的产生和重组。进一步，还评估了对阈值电压和灵敏度的热影响。结果表明，拟议的设备具有...