A GaN-based pin neutron detector with a 6LiF conversion layer was fabricated, and can be used to detect thermal neutrons. Measurement of the electrical characteristic of the GaN-based pin neutron detector showed that the reverse leakage current of the neutron detector was reduced significantly after deposition of a 6LiF conversion layer on the detector surface. The thermal neutrons used in this experiment were obtained from an 241Am–Be fast neutron source after being moderated by 100-mm-thick high-density polyethylene. The experimental results show that the detector with 16.9-μm thick 6LiF achieved a maximum neutron detection efficiency of 1.9% at a reverse bias of 0 V, which is less than the theoretical detection efficiency of 4.1% calculated for our GaN neutron detectors.

中文翻译：

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具有⁶ LiF 转换层的 GaN 热中子探测器的制造和性能评估

制作了具有 6LiF 转换层的基于 GaN 的 pin 中子探测器，可用于探测热中子。对GaN基pin中子探测器电特性的测量表明，在探测器表面沉积6LiF转换层后，中子探测器的反向漏电流显着降低。本实验中使用的热中子是由 241Am-Be 快中子源经 100 毫米厚的高密度聚乙烯慢化后获得的。实验结果表明，具有 16.9 μm 厚 6LiF 的探测器在 0 V 反向偏压下实现了 1.9% 的最大中子探测效率，低于我们为 GaN 中子探测器计算的 4.1% 的理论探测效率。