In this review paper, we present a comparative analysis of the electrochemical dissolution of III-V (InP, GaAs, GaN), II-VI (ZnSe, CdSe) and SiC semiconductor compounds. The resulting morphologies are discussed including those of porous layers and networks of low-dimensional structures such as nanowires, nanobelts, nanomembranes etc. Self-organized phenomena in anodic etching are disclosed, leading to the formation of controlled porous patterns and quasi-ordered distribution of pores. Results of templated electrochemical deposition of metal nanowires, nanotubes and nanodots are summarized. Porosification of some compounds is shown to improve luminescence characteristics as well as to enhance photoconductivity, second harmonic generation and Terahertz emission. Possible applications of porous semiconductor compounds in various areas are discussed.

中文翻译：

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多孔半导体化合物

在这篇综述论文中，我们对 III-V（InP、GaAs、GaN）、II-VI（ZnSe、CdSe）和 SiC 半导体化合物的电化学溶解进行了比较分析。讨论了所得的形态，包括多孔层和低维结构网络的形态，如纳米线、纳米带、纳米膜等。 公开了阳极蚀刻中的自组织现象，导致形成受控的多孔图案和准有序分布毛孔。总结了金属纳米线、纳米管和纳米点的模板化电化学沉积的结果。一些化合物的孔隙化显示出改善发光特性以及增强光电导性、二次谐波产生和太赫兹发射。讨论了多孔半导体化合物在各个领域的可能应用。