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Thin Ferrite Wafer Uniformly Polished with Magnetic Attraction Method
ECS Journal of Solid State Science and Technology ( IF 2.2 ) Pub Date : 2020-09-06 , DOI: 10.1149/2162-8777/abb3af
Jing Wang 1, 2, 3, 4 , Lin Ou 1, 2, 3, 4 , Pengfei Hu 1, 2, 3, 4 , Guangcai Wang 1, 2, 3, 4
Affiliation  

When a ferrite substrate is used to prepare thin-film InSb Hall element chips, one surface of the ferrite wafer needs to be polished. The traditional chemical mechanical polishing (CMP) method, often used for polishing of ferrite wafers, has several problems: a long time to install and remove wafers, a little high debris rate, and high cost. Taking advantage of the fact that ferrite wafers can be magnetically attracted, a method using independent RuFeB magnets to attract and hold ferrite wafers is proposed. The polishing head holding the ferrite wafer can perform planetary rotary motion to achieve uniform polishing. The polishing head floats up and down freely on the polishing pad, without the requirements of matching and process accuracy in machining, mechanical linkage, and control. The roughness of the ferrite surface after polishing is about 0.18 μ m, which meets the requirements for the substrate of InSb Hall element chips. With no debris, the efficiency of installing...

中文翻译:

磁引力法均匀抛光薄铁氧体晶圆

当使用铁氧体衬底制备薄膜InSb霍尔元件芯片时,需要对铁氧体晶片的一个表面进行抛光。通常用于抛光铁氧体晶片的传统化学机械抛光(CMP)方法存在几个问题:安装和取出晶片的时间长,碎屑率高,成本高。利用铁氧体晶片可以被磁吸引的事实,提出了一种使用独立的RuFeB磁体来吸引并保持铁氧体晶片的方法。保持铁氧体晶片的抛光头可以执行行星旋转运动以实现均匀抛光。抛光头在抛光垫上自由地上下浮动,而在机械加工,机械连接和控制方面不需要匹配和工艺精度。抛光后铁素体表面的粗糙度约为0。18μm,符合InSb霍尔元件芯片的基板要求。没有碎片,安装效率高。
更新日期:2020-09-08
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