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Nitrogen-Doped Few-Layer Graphene Grown Vertically on a Cu Substrate via C60/Nitrogen Microwave Plasma and Its Field Emission Properties
The Journal of Physical Chemistry C ( IF 3.7 ) Pub Date : 2020-09-07 , DOI: 10.1021/acs.jpcc.0c05563
Hui Zheng 1 , Qingqing Chu 1 , Peng Zheng 1 , Liang Zheng 1 , Xiaolong Zheng 1 , Lihuan Shao 1 , Feimei Wu 1 , Zhangting Wu 1 , Yuan Jiang 1 , Yang Zhang 1
Affiliation  

Vertical few-layer graphene (V-FLG) sheet is expected to be a high field emitter due to its electrical properties and open surface with sharp edges. However, the complicated and tedious preparation method using gaseous carbon-containing precursor limited the universal application of V-FLG. This paper reports a novel, simple, and green method to prepare vertical nitrogen-doped few-layer graphene (V-NFLG) on the metal surfaces that exhibit excellent field emission properties. The V-NFLG was grown on a Cu substrate using C60 as a precursor with the help of a nitrogen microwave plasma. Growth and doping mechanisms for the few-layer graphene are suggested based on microwave plasma emission spectra of C60/nitrogen. The as-prepared NFLG exhibits remarkable field emission performance, with a high field enhancement factor (7430 at the high field), a low turn-on field (1.45 V/μm at 10 μA/cm2), and high stability (within ±4%), showing its great potential for field emission applications.

中文翻译:

通过C 60 /氮微波等离子体在铜基板上垂直生长的氮掺杂少层石墨烯及其场发射特性

垂直的几层石墨烯(V-FLG)片由于其电性能和具有锋利边缘的开放表面而有望成为高场发射器。然而,使用气态含碳前体的复杂繁琐的制备方法限制了V-FLG的普遍应用。本文报道了一种新颖,简单且绿色的方法,该方法可在具有优异场发射特性的金属表面上制备垂直氮掺杂的多层石墨烯(V-NFLG)。V-NFLG在氮气微波等离子体的帮助下,以C 60为前体在Cu基片上生长。基于C 60的微波等离子体发射光谱,提出了几层石墨烯的生长和掺杂机理/氮。所制备的NFLG具有出色的场发射性能,具有高场增强因子(高场为7430),低导通场(在10μA/ cm 2时为1.45 V /μm )和高稳定性(±± 4%),显示其在场发射应用中的巨大潜力。
更新日期:2020-10-02
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