Herein, the fabrication of InP photonic‐crystal surface‐emitting lasers (PCSELs) using a buried airhole/InP photonic‐crystal (PC) layer based on an epitaxial regrowth process is reported. The formation of PC voids in the InP crystal structure requires a precise tuning of the metal‐organic vapor‐phase epitaxy (MOVPE) growth parameters, where the regrowth evolution is a function of temperature, V/III ratio, and growth rate. With precise control of these parameters, it is possible to alter the airhole shape from complete infilling to perfect encapsulation. Low‐threshold lasing is demonstrated from these encapsulated airhole regrown PCSELs using optical pumping.

中文翻译：

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埋入式InP /气孔光子晶体表面发射激光器

本文中，报道了基于外延再生过程使用埋入式气孔/ InP光子晶体（PC）层制造InP光子晶体表面发射激光器（PCSEL）。InP晶体结构中PC空隙的形成需要精确调整金属-有机气相外延（MOVPE）生长参数，其中再生长的演变是温度，V / III比和生长速率的函数。通过对这些参数的精确控制，可以将气孔形状从完全填充更改为完美封装。使用光泵浦从这些封装的气孔再生长PCSEL中证明了低阈值激射。