Cr₂AlC MAX phase thin films prepared by radio‐frequency magnetron sputtering were irradiated at room temperature by 100 keV helium ions to a fluence of 1 × 10¹⁷ ions cm⁻². The effects of thermal annealing on the structural and mechanical properties of the helium‐irradiated Cr₂AlC films as well as the helium release were investigated by grazing‐incidence X‐ray diffraction (GIXRD), Raman spectroscopy, and scanning electron microscope (SEM) in combination with nano‐indentation and elastic recoil detection (ERD) analysis. The irradiation‐induced structural damage in the Cr₂AlC is significantly recovered by thermal annealing at temperatures around 600℃, attributed to high defect diffusivity. After annealing to 750℃, the hardness of irradiated films recovered almost completely, which is ascribes to both defect recombination and reformation of damaged chemical bonds. Substantial helium release occurring at this annealing temperature is closely related to the damage recovery due to helium irradiation.

中文翻译：

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退火对氦辐照Cr2AlC薄膜结构和硬度的影响

通过射频磁控溅射制备的Cr ₂ AlC MAX相薄膜在室温下用100 keV氦离子辐照，通量为1×10 ¹⁷离子cm ^-2。通过掠入射X射线衍射（GIXRD），拉曼光谱和扫描电子显微镜（SEM）研究了热退火对氦辐照Cr ₂ AlC膜的结构和力学性能以及氦释放的影响。结合纳米压痕和弹性反冲检测（ERD）分析。Cr ₂的辐照引起的结构破坏通过在600℃左右的温度下进行热退火可以显着回收AlC，这归因于缺陷扩散率高。退火至750℃后，被辐照膜的硬度几乎完全恢复，这归因于缺陷复合和受损化学键的重新形成。在此退火温度下发生的大量氦气释放与氦气辐照导致的损伤恢复密切相关。