Abstract We demonstrate 2.0–2.2 eV AlGaInP solar cells grown by molecular beam epitaxy and their performance improvement by rapid thermal annealing (RTA). As grown, these cells exhibit lower performance than their counterparts grown by metal-organic vapor phase epitaxy (MOVPE), indicating a high concentration of point defects. RTA improves all aspects of performance, enabling our 2.0 eV cells to match the efficiency of MOVPE-grown cells. RTA also improves the performance of wider-bandgap AlGaInP solar cells, but the magnitude of improvement decreases with %Al/bandgap energy.

中文翻译：

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通过分子束外延生长的 2.0–2.2 eV AlGaInP 太阳能电池

摘要 我们展示了通过分子束外延生长的 2.0-2.2 eV AlGaInP 太阳能电池及其通过快速热退火 (RTA) 的性能改进。随着生长，这些电池的性能低于通过金属有机气相外延 (MOVPE) 生长的对应电池，这表明点缺陷的浓度很高。RTA 提高了性能的各个方面，使我们的 2.0 eV 电池能够与 MOVPE 生长电池的效率相匹配。RTA 还提高了更宽禁带 AlGaInP 太阳能电池的性能，但提高的幅度随着铝/带隙能量百分比的增加而降低。