Abstract

The relaxation rates of arsenic donor states in germanium upon interaction with acoustic phonons are analyzed depending on uniaxial crystal compression deformation along [110] direction at low temperatures (<10 K). It is shown that the formation of the inverse population of donor levels, which depends on the crystal-deformation magnitude, occurs under optical excitation, which gives us grounds to assume the possibility of the effect of stimulated radiation in the THz frequency range at intracenter transitions of shallow arsenic donors under their optical excitation. It is shown that uniaxial deformation can lead to switching of the laser transition and, consequently, to a variation in the stimulated-radiation frequency.

中文翻译：

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沿[110]方向单轴变形对锗中砷浅施主态弛豫的影响

摘要

根据在低温（<10 K）下沿[110]方向的单轴晶体压缩变形，分析了锗与声子相互作用时施主态的弛豫速率。结果表明，取决于晶体变形幅度的供体能级的反种群的形成是在光激发下发生的，这使我们有理由假设在中心内过渡处太赫兹频率范围内受激辐射的影响的可能性。光激发下浅砷供体的分布 结果表明，单轴变形会导致激光跃迁的切换，并因此导致受激辐射频率的变化。